preliminary SIDC56D170E6 edited by infineon technologies ai ps dd hv3, l4251m , edition 1, 28.02.02 fast switching diode chip in emcon - technology this chip is used for: eupec power modules and discrete devices features: 1700v emcon technology 200 m chip soft , fast switching low reverse recovery charge small temperature coefficient applications: smps, resonant applications, drives a c chip type v r i f die size package ordering code SIDC56D170E6 1700v 75a 7.5 x 7.5mm 2 sawn on foil q67050 - a4120 - a001 mechanical parameter: raster size 7.5 x 7.5 area total / act ive 56.25 / 40.07 anode pad size 5.48 x 5.48 mm 2 thickness 200 m wafer size 150 mm flat position 180 deg max. possible chips per wafer 248 pcs passivation frontside photoimide anode metalization 3200 nm al si cu cathode metalization 1400 nm ni ag ? system suitable for epoxy and soft solder die bonding die bond electrically conductive glue or solder wire bond al, 500m reject ink dot size ? 0.65mm recommended storage environment store in original container, in dry nitrogen, < 6 month at an amb ient temperature of 23c
preliminary SIDC56D170E6 edited by infineon technologies ai ps dd hv3, l4251m , edition 1, 28.02.02 maximum ratings parameter symbol condition value unit repetitive peak reverse voltage v rrm 1700 v continuous forward current limited by t jmax i f 75 single pulse forward current (depending on wire bond configuration) i fsm t p = 10 ms sinusoidal tbd maximum repetitive forward current limited by t jmax i frm 150 a operating junction and storage temperature t j , t stg - 55...+150 c static electrical characteristics (tested on chip), t j =25 c, unl ess otherwise specified value parameter symbol conditions min. typ. max. unit reverse leakage current i r v r =1700v t j =25 c 375 a cathode - anode breakdown voltage v br i r =5ma t j =25c 1700 v forward voltage drop v f i f =75a t j =25 c 2.15 v d ynamic electrical characteristics , at t j = 25 c, unless otherwise specified, tested at component value parameter symbol conditions min. typ. max. unit t rr1 i f =75a t j = 25 c tbd reverse recovery time t rr2 di/dt=1100a/ m s v r =900v t j = 150 c ns i rrm1 t j = 25 c 55 peak recovery current i rrm2 i f =75a di/dt=1100a/ m s v r =900v t j = 150 c 85 a q rr1 t j =25 c 9 reverse recovery charge q rr2 i f =75a di/dt=1100a/ m s v r =900v t j =150 c 19 c di rr1 /dt t j = 25 c tbd peak rate of fall of reve rse recovery current di rr2 /dt i f =75a di/dt=1100a/ m s v r =900v t j =150 c a/ m s s1 t j =25 c tbd softness s2 i f =75a di/dt=1100a/ m s v r =900v t j =150 c 1
preliminary SIDC56D170E6 edited by infineon technologies ai ps dd hv3, l4251m , edition 1, 28.02.02 chip drawing:
preliminary SIDC56D170E6 edited by infineon technologies ai ps dd hv3, l4251m , edition 1, 28.02.02 further electrical characteristics: this chip data sheet refers to the device data sheet infineon technologies / eupec tbd description: aql 0,65 for visual inspection according to failure catalog electrostatic discharge sensitive device according to mil - std 883 test - normen villach/prffeld pu blished by infineon technologies ag bereich kommunikation st. - martin - strasse 53 d - 81541 mnchen ? infineon technologies ag 2000 all rights reserved. attention please! the information herein is given to describe certain components and shall not be consid ered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non - infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies represent atives world - wide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components ma y only be used in life - support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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